Improving channel strain and controlling lateral epitaxial growth of the source and drain in finfet devices

ABSTRACT

A multi-gate finFET structure and formation thereof. The multi-gate finFET structure has a first gate structure that includes an inner side and an outer side. Adjacent to the first gate structure is a second gate structure. The inner side of the first gate structure faces, at least in part, the second gate structure. A stress-inducing material fills a fin cut trench that is adjacent to the outer side of the first gate structure. An epitaxial semiconductor layer fills, at least in part, an area between the first gate structure and the second gate structure.

BACKGROUND OF THE INVENTION

The present invention relates generally to the field of semiconductorstructures, and more particularly to the retention of strain and thecontrol of germanium epitaxial growth thickness on FinFET devicechannels.

A pure semiconductor is a poor electrical conductor as a consequence ofhaving just the right number of electrons to completely fill its valencebonds. Through various techniques (e.g. doping or gating), thesemiconductor can be modified to have an excess of electrons (becomingan n-type semiconductor) or a deficiency of electrons (becoming a p-typesemiconductor). In both cases, the semiconductor becomes much moreconductive (the conductivity can be increased by one million-fold ormore). Semiconductor devices exploit this effect to shape electricalcurrent. The study of semiconductor materials is an important area ofmaterial science research due to their application in devices such astransistors and therefore computers.

The most commonly used semiconductor materials are crystalline inorganicmaterials, which are classified according to the periodic table groupsof their constituent atoms and also whether they are composed of asingle element or more than one element.

Field-effect transistors (FETs) are transistors that employ an electricfield to control the conductivity of a channel in which one of the twotypes of charge carriers may travel. A FET is composed of a source and adrain connected by the channel through which the charge carriers,electrons or holes, pass when voltage is applied to a gate. The gatesits over the channel separated by an insulating material referred to asthe gate dielectric. Applying voltage to the gate changes the amount ofcharge carriers in the channel thereby controlling the current in thedevice.

The term FinFET describes a non-planar, trigate transistor built on asilicon-on-insulator (SOI) or bulk silicon substrate. The distinguishingcharacteristic of the FinFET is that the conducting channel is a siliconor silicon germanium “fin”, which forms the body of the device. Thewrap-around gate-over-fin channel structure provides better electricalcontrol over the channel and thus helps in reducing the leakage currentand overcoming other short-channel effects.

Charge carrier transport that is typically described by mobility throughFET channels is an important factor for optimal performance. One waycharge carrier transport can be modulated is through strain. Forexample, strained channels have been successfully integrated into Si-and Ge-based metal oxide semiconductor FETs (MOSFETs) to enhance carriermobility.

SUMMARY

According to one embodiment of the present disclosure, a structurecomprising a multi-gate finFET structure. The multi-gate finFETstructure includes a first gate structure that includes an inner sideand an outer side. Adjacent to the first gate structure is a second gatestructure. The inner side of the first gate structure faces, at least inpart, the second gate structure. A stress-inducing material fills a fincut trench that is adjacent to the outer side of the first gatestructure. An epitaxial semiconductor layer fills, at least in part, anarea between the first gate structure and the second gate structure.

According to one embodiment of the present disclosure, a method offorming a multi-gate finFET structure is provided. The method includingdepositing a stress-inducing material into a fin cut trench that isadjacent to an outer side of a first gate structure such that a channel,which is controlled by the first gate structure, has a first amount ofstrain. An epitaxial semiconductor layer is grown between the first gatestructure and a second gate structure. The first amount of strain isincreased to a second amount of strain as a result of the growth of theepitaxial semiconductor layer.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The following detailed description, given by way of example and notintended to limit the disclosure solely thereto, will best beappreciated in conjunction with the accompanying drawings, in which:

FIG. 1 illustrates a top-down view depicting a structure that includesfins and gate structures, in accordance with an exemplary embodiment ofthe present invention.

FIG. 2 illustrates a cross-sectional view depicting the structure ofFIG. 1 that includes a fin and gate structures, in accordance with anexemplary embodiment of the present invention.

FIG. 3 illustrates a cross-sectional view depicting the formation of aspacer layer on the structure depicted in FIG. 2, in accordance with anexemplary embodiment of the present invention.

FIG. 4 illustrates a cross-sectional view depicting the formation of amiddle of the line (MOL) inter-layer dielectric (ILD) layer on thestructure depicted in FIG. 2, in accordance with an exemplary embodimentof the present invention.

FIG. 5 illustrates a cross-sectional view depicting the formation of anend fin cut using a photo-resist patterning layer on the structuredepicted in FIG. 4 and patterning of the photo-resist patterning layer,in accordance with an exemplary embodiment of the present invention.

FIG. 6 illustrates a cross-sectional view depicting the removal of aportion of the ILD, spacer, gate dielectric, and fin layers in thestructure depicted in FIG. 5 thereby creating trenches, in accordancewith an exemplary embodiment of the present invention.

FIG. 7 illustrates a cross-sectional view depicting the deposition of astress nitride within the trenches created in the structure depicted inFIG. 6, in accordance with an exemplary embodiment of the presentinvention.

FIGS. 8A and 8B illustrate a cross-sectional view and a top-down view,respectively, depicting the photoresist patterning of trench contacts onthe structure depicted in FIG. 7.

FIG. 9 illustrates a cross-sectional view depicting the removal ofportions of the MOL ILD layer followed by reactive-ion etching, whichremoves portions of the gate dielectric and fin layers from thestructure depicted in FIG. 8 thereby creating trenches, in accordancewith an exemplary embodiment of the present invention.

FIG. 10 illustrates a cross-sectional view depicting epitaxial growthwithin the trenches created in the structure depicted in FIG. 9, inaccordance with an exemplary embodiment of the present invention.

FIG. 11 illustrates a top-down view depicting the formation of contactson top of the epitaxial growth layer created in the structure depictedin FIG. 10, in accordance with an exemplary embodiment of the presentinvention.

FIG. 12 illustrates a cross-sectional view illustrating the confinementof the epitaxial growth layer created in the structure depicted in FIG.11, in accordance with an exemplary embodiment of the present invention.

The drawings are not necessarily to scale. The drawings are merelyschematic representations, not intended to portray specific parametersof the invention. The drawings are intended to depict only typicalembodiments of the invention. In the drawings, like numbering representslike elements.

DETAILED DESCRIPTION

Strain is used in FET channel design in order to increase both electronand hole mobility, which leads to improved chip performance. Strainoccurs when lattice mismatching is induced by the epitaxial growth of afirst semiconductor material onto a second semiconductor material with adifferent composition of matter than the first semiconductor material.In the case of finFET design, channel strain is induced by the epitaxialgrowth of different alloys of silicon germanium on top of each other.However, the strain that is created from the epitaxial layer growth isoften lost after the end fin cut in the fin process module, which isperformed prior to gate formation. In some cases, the strain loss is30-50%. In addition to the issue of strain loss, excessive lateralsource-drain epitaxial growth can cause shorts between the negativefield-effect transistor (NFET) fin and the positive field-effecttransistor (PFET) fin devices in the static random access (SRAM) area.It is challenging to control the lateral epitaxial growth for the gatepitch less than 64 nm.

As shown in FIGS. 1-12, embodiments of the present invention recognizethat a plurality of fins and corresponding gate structures are createdin some FinFET devices such that these structures are joined to eachother either directly or indirectly via a common component. In theembodiments shown in FIGS. 1-12, a plurality of fins are shown as beingjoined to each other via gate structures. As used herein an end fin cutrefers to the removal of material that is adjacent to, but may not bedirectly abutting, an end gate structure. An end gate structure refersto a gate structure in a multi-gate finFET structure, wherein the endgate structure has an adjacent gate structure that faces an inner sideof the end gate structure and a future or present termination (i.e.,“cut”) of one or both of a fin structure and other structures on anouter side of the end gate structure that does not face another gatestructure. See the description of FIG. 2 for a further detailedexplanation.

One skilled in the art is aware that a fin may have one or more layersof material that cover a portion of the fin and are intervening betweenthe fin and the material that is removed, i.e. cut. An example of such a“cut” process is illustrated in at least FIG. 5, and is described infurther detail herein. Embodiments of the present invention recognizethat channel strain is lost during finFET fabrication after an end fincut is formed. Some embodiments of the present invention recognize usinga lithography mask layer to facilitate the formation of an end fin cut.Embodiments of the present invention provide a semiconductor structureand process that prevents channel strain loss after the end fin isformed using a lithography mask layer. Embodiments of the presentinvention recognize that epitaxial growth of silicon germanium alloysduring finFET fabrication results in poor control of the lateralthickness of the newly formed layer. Embodiments of the presentinvention provide a semiconductor structure and process that results inimproved control of lateral source drain epitaxial growth in a finFETdevice. Embodiments of the present invention recognize that loss ofchannel strain is avoided by processing the end fin, which is cut afterthe gate formation module and during the MOL (middle of the line)module. Embodiments of the present invention recognize that lateralepitaxial layer shorts can be avoided with epitaxial growth through theMOL confined trench contact.

Exemplary embodiments now will be described more fully herein withreference to the accompanying drawings, in which exemplary embodimentsare shown. In the following detailed description, numerous specificdetails are set forth in order to provide a thorough understanding ofvarious embodiments of the invention. However, it is to be understoodthat embodiments of the invention may be practiced without thesespecific details. As such, this disclosure may be embodied in manydifferent forms and should not be construed as limited to the exemplaryembodiments set forth herein. Rather, these exemplary embodiments areprovided so that this disclosure will be thorough and complete and willfully convey the scope of this disclosure to those skilled in the art.In the description, details of well-known features and techniques may beomitted to avoid unnecessarily obscuring the presented embodiments.

As described below in conjunction with FIGS. 1-12, embodiments mayinclude methods of forming finFETs that have strained channel regionsseparating the source device from the drain device. The methodsdescribed below in conjunction with FIGS. 1-12 may be incorporated intotypical semiconductor fabrication processes.

For purposes of the description hereinafter, terms such as “upper”,“lower”, “right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the disclosed structures andmethods, as oriented in the drawing figures. Terms such as “above”,“overlying”, “atop”, “on top”, “positioned on” or “positioned atop” meanthat a first element, such as a first structure, is present on a secondelement, such as a second structure, wherein intervening elements, suchas an interface structure may be present between the first element andthe second element. The term “direct contact” means that a firstelement, such as a first structure, and a second element, such as asecond structure, are connected without any intermediary conducting,insulating or semiconductor layers at the interface of the two elements.

In the interest of not obscuring the presentation of embodiments of thepresent invention, in the following detailed description, someprocessing steps or operations that are known in the art may have beencombined together for presentation and for illustration purposes and insome instances may have not been described in detail. In otherinstances, some processing steps or operations that are known in the artmay not be described at all. It should be understood that the followingdescription is rather focused on the distinctive features or elements ofvarious embodiments of the present invention.

As used herein, terms such as “depositing”, “forming”, and the likerefer to the disposition of layers or portions of materials in thepresent embodiments. Such processes may not be different than in thestandard practice of the art of FET fabrication. Such practice includebut are not limited to, metalorganic chemical vapor deposition (MOCVD),atomic layer deposition (ALD), chemical vapor deposition (CVD),low-pressure chemical vapor deposition (LPCVD), plasma enhanced chemicalvapor deposition (PECVD), ultrahigh vacuum chemical vapor deposition(UHVCVD), physical vapor deposition, sputtering, plating, evaporation,ion beam deposition, electron beam deposition, laser assisteddeposition, chemical solution deposition, or any combination of thosemethods.

As used herein, semiconductor structures refer to one or more physicalstructures that comprise semiconductor devices.

The present invention will now be described in detail with reference tothe Figures.

FIG. 1 illustrates a top view depicting a structure that includes fins 6and gate structures 5, in accordance with an exemplary embodiment of thepresent invention. Note that in this embodiment, the respective lengthsof gate structures 5, denoted by double arrow 51 whose tips touch theopposite ends of gate structure 5 following its length, are shown asperpendicular to fins 6 in FIG. 1. Also note that the cross-sectiondepicted occurs along the line 2-2 results in a cross section of thesemiconductor structure of FIG. 1 having a cross section that includesthe full length of a fin 6 but bisects each of gate structures 5 acrosstheir respective widths, which are perpendicular to double arrow 51 andrun parallel to the length of fins 6 and line 2-2. This is further shownin FIG. 2 described later herein. Such orientations and descriptions areprovided herein for ease of understanding and are not limiting. In someembodiments, true gate structures are introduced late in the fabricationand sacrificial gate structures are present at the stage depicted inFIG. 1. However, in other embodiments, true gate structures areintroduced earlier in the fabrication. In those embodiments, the gatestructures depicted in FIG. 1 are not sacrificial gate structures, buttrue gate structures. The formation of gate structures (both true andsacrificial) as embodied by FIG. 1 is well understood by those skilledin the art and, as such, a detailed description of such processes is notpresented herein.

FIG. 2 illustrates a cross-sectional view taken about the line 2-2 ofFIG. 1, in accordance with an exemplary embodiment of the presentinvention. FIG. 2 illustrates a cross-section through one fin and acrossall of the gate structures, in accordance with an exemplary embodimentof the present invention. FIG. 2 illustrates inner gates 14 and endgates 15. As shown, each end gate 15 has an inner side surface 152 thatfaces an inner side surface 142 of an inner gate 14. Also note that eachouter side surface 151 of each end gate 15 does not face an inner sidesurface 142. As such, as shown in FIGS. 1-12 an end fin cut refers tothe removal of material that is adjacent to, but may not be directlyabutting, an outer side surface 151 of an end gate 15. In the examplesdescribed herein, each outer side surface 151 defines a planar surfacethat provides a point of reference by which material is seen as beingremoved from the semiconductor structure. In some embodiments, one ormore portions of material are removed such that a portion of material isleft abutting outer side surface 151 while the one or more portions ofmaterial (which are further away from outer side surface 151 respectiveto the portion of material that is left abutting outer side surface 151)are removed. See FIG. 6 and its associated description for an example ofsuch a removal of material.

The gate structures depicted in FIG. 2 include a top layer of hard mask10. In this embodiment, hard mask 10 is composed of silicon nitride. Inother embodiments, hard mask 10 is composed of any known material thatis suitable for use as a hard mask. Directly beneath and in contact withhard mask 10 are inner gates 14 and end gates 15. In variousembodiments, inner gates 14 and end gates 15 are sacrificial gatescomposed of silicon or any dielectric material suitable for use as asacrificial gate material.

In other embodiments inner gates 14 and end gates 15 are true gates. Inthose embodiments, inner gates 14 and end gates 15 are composed of anyconductive material including, for example, doped polysilicon with metalsilicide, an elemental metal (e.g., tungsten, titanium, tantalum,aluminum, nickel, ruthenium, palladium and platinum), an alloy of atleast two elemental metals, an elemental metal nitride (e.g., tungstennitride, aluminum nitride, and titanium nitride), an elemental metalsilicide (e.g., tungsten silicide, nickel silicide, and titaniumsilicide) or multilayered combinations thereof.

The fin 6 depicted in FIG. 2 includes gate dielectric layer 12 andchannel 16. Note that gate dielectric layer 12 and channel 16 have alength denoted by double arrow 161. In various embodiments, channel 16is composed of silicon (Si), silicon-germanium (SiGe), a combination ofSi/SiGe/Si and another semiconducting layer such as a III-V compoundsemiconductor and/or a II-VI compound semiconductor, all of which servesto enhance the channel strain layer of channel 16. Gate dielectric layer12 is in direct contact with and in between the gate structures andchannel 16. Gate dielectric layer 12 provides an insulating layerseparating channel 16 from inner gates 14 and end gates 15.

In various embodiments, gate dielectric layer 12 is composed of aninsulator, typically SiO₂ or a high-κ dielectric metal oxide such ashafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride,lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconiumsilicon oxide, zirconium silicon oxynitride, tantalum oxide, titaniumoxide, barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, and lead zinc niobate.

FIG. 3 illustrates a cross-sectional view depicting the formation ofspacer layer 20 on the structure depicted in FIG. 2, in accordance withan exemplary embodiment of the present invention. As shown in FIG. 3,spacer layer 20 is in direct contact with hard mask 10, inner gates 14and end gates 15, gate dielectric layer 12, and channel 16. Theformation of spacer layers such as spacer layer 20 and as embodied byFIG. 3 is well understood by those skilled in the art and, as such, adetailed description of such processes is not presented herein. Invarious embodiments, spacer layer 20 is composed of a dielectricmaterial such as silicon nitride, silicon dioxide, various well-knowncombinations of silicon, oxygen, boron, and nitrogen, and any dielectriclayer whose dielectric constant value κis less than 6.

FIG. 4 illustrates a cross-sectional view depicting the formation of amiddle of the line (MOL) inter-layer dielectric (ILD) layer portions 24(outside of end gates 15 to the left and to the right) and 22 (betweenthe gate structures) on the structure depicted in FIG. 2, in accordancewith an exemplary embodiment of the present invention. As shown in FIG.4, MOL ILD layer portions 24 and 22 are in direct contact with spacelayer 20. In various embodiments, MOL ILD layer portions 24 and 22 areformed to a level higher than the level of the portion of spacer layer20 residing on top of hard mask 10. A subsequent chemical-mechanicalplanarization (CMP) step produces a flat top surface substantially atthe level of the portion of spacer layer 20 residing on top of hard mask10 as represented in FIG. 4.

The formation of MOL ILD layers as embodied by MOL ILD layer portions 24and 22 in FIG. 4 is well understood by those skilled in the art and, assuch, a detailed description of such processes is not presented herein.In various embodiments, MOL ILD layer portions 24 and 22 are composed ofa dielectric material (typically silicon dioxide), however, low-κdielectric material (κ<4) can also be used to form MOL ILD layerportions 24 and 22.

FIG. 5 illustrates a cross-sectional view depicting the formation of aphoto-resist patterning layer on the structure depicted in FIG. 4 andpatterning of the photo-resist patterning layer using deep ultraviolet(DUV) or extreme ultraviolet (EUV) lithography exposure techniques toproduce photo-resist patterned layer 30 and trenches 32, in accordancewith an exemplary embodiment of the present invention. As shown in FIG.5, photo-resist patterned layer 30 is on top and in direct contact withportions of spacer layer 20 residing on top of hard mask 10 and portionsof photo-resist patterned layer 30 are on top and in direct contact withportions of MOL ILD layer portions 24 and 22. Trenches 32 exposeportions of MOL ILD layer portions 24 for a subsequent RIE step. Invarious embodiments, photo-resist patterned layer 30 is a single, bi, ortri-layer. In exemplary embodiments, photo-resist patterned layer 30 isa tri-layer stack of optical deposition layers (ODL). Photo-resistpatterned layer 30 is typically a carbon-containing organic spin-onmaterial such as poly(methyl methacrylate) (PMMA), polymethylglutarimide(PMGI), etc. The formation of photo-resist patterning layers such asphoto-resist patterned layer 30 as embodied by FIG. 5 is well understoodby those skilled in the art and, as such, a detailed description of suchprocesses is not presented herein.

FIG. 6 illustrates a cross-sectional view depicting the removal ofportions of MOL ILD layer portions 24, spacer layer 20, gate dielectriclayer 12, and fin layer 16 in the structure depicted in FIG. 5 therebycreating trenches, denoted using brackets 34, in accordance with anexemplary embodiment of the present invention. Note that the length offin 6, which includes gate dielectric layer 12 and fin layer 16, isreduced in length. As such, the length of fin 6 shown in FIGS. 1-5 isreduced from the length indicated by double arrow 161 in FIG. 2 to thereduced length indicated by double arrow 162. In other words the lengthof fin 6 is reduced as a result of the removal of portions of MOL ILDlayer portions 24, spacer layer 20, gate dielectric layer 12, and finlayer 16. In various embodiments, the portions of MOL ILD layer portions24 are removed with reactive-ion etching (RIE) followed by fin etches toremove the portions of spacer layer 20, gate dielectric layer 12, andfin layer 16. Note that portions of spacer layer 20 that is abuttingeach outer side surface 151 of end gate 15 remain while material that isfurther away from outer side surface 151 is removed, thereby creatingtrenches 34. Note that the respective direction away from each end gate15 is indicated by arrows labeled 341 and 342. Also note that twoportions of spacer layer 20 that are covering outer side surface 151 arelabeled as spacer side surface 202 and spacer side surface 204. Each ofspacer side surface 202 and spacer side surface 204 respectively definea planar surface that provides a point of reference by which material isshown in the Figures as being removed from the semiconductor structure.In this example, material that is further away from spacer side surface202 and spacer side surface 204, using arrows labeled 341 and 342 fororientation, is removed. Also note that the removal of material islimited to the areas defined by brackets 34. Note that the dimensions ofeach trench denoted by bracket 34 has an inherent width extending outand away from spacer its respective side surface 202 or spacer sidesurface 204 that coincides the width of each bracket 34. In other words,the width is perpendicular respective to respective side surface 202 orspacer side surface 204. The trench also has a height that is in planewith its respective spacer side surface 202 and spacer side surface 204.This height is indicated in FIG. 7 using double arrow 41 whose tipstouch the opposite sides of stress nitride 40 in a direction that isparallel to side surface 202 and side surface 204. Note that the heightof stress nitride 40 is substantially similar to the height of thetrench since stress nitride 40 is formed in, i.e. fills, that trench.Note that, as in known to those skilled in the art, any suitable stressinducing material may be used in place of stress nitride 40 in someembodiments. In general, stress nitride 40 represents any suitablematerial that provides structural reinforcement such that the desiredamount of strain is retained after an epitaxial growth of materialbetween an inner gate 14 and an adjacent end gate 15. In the describedembodiments, a channel of end gate 15 is under an initial amount ofstrain, which is relatively low in some embodiments. However, due tostress nitride 40 filling the trench, when a larger amount of strain isapplied to the channel as a result of epitaxial growth of materialbetween inner gate 14 and an adjacent end gate 15, the strain isretained, at least in part, as a result of the structural reinforcementprovided by stress nitride 40. The result is that the channel of endgate 15 has an increased degree of strain when compared to its initialamount of strain.

FIG. 7 illustrates a cross-sectional view depicting the deposition of astress nitride 40 within the trenches created in the structure depictedin FIG. 6, in accordance with an exemplary embodiment of the presentinvention. In various embodiments, stress nitride 40 is composed ofsilicon nitride. In the present embodiment, the deposition of stressnitride 40 is followed by CMP. In exemplary embodiments, the depositionof stress nitride 40 sets the stage for control of strain. Siliconnitride (Si₃N₄) can be tensile or compressive depending on depositionprocess. Deposition process techniques include but not limited to CVD(chemical vapor deposition) or ALD (atomic layer deposition) with andwithout plasma enhancement. Typically, tensile stress nitride 40 is usedat the ends of fins for PFET devices so that compressive strain isproduced on PFET channel. Compressive stress nitride 40 is used at theends of fins for NFET devices so that tensile strain is produced on NFETchannel. Stress nitride 40 thickness can range from 10 nm to 200 nm,i.e. the width of bracket 34, which corresponds to the width of thetrench, is also 10 nm to 200 nm. Note that, in this embodiment, stressnitride 40 is adjacent to but not directly abutting end gate 15.

FIGS. 8A and 8B illustrate a cross-sectional view and a top-down view,respectively, depicting the photoresist patterning of trench contacts onthe structure depicted in FIG. 7. Photo-resist patterned layer 42 iscomposed of silicon-containing anti-reflective coating (SiARC) or a lowtemperature oxide layer, which serves to control the critical dimension(CD) and opening profile during the formation of trenches 44. Trenches44 are developed by DUV or EUV.

FIG. 9 illustrates a cross-sectional view depicting the removal of MOLILD layer portions 22 in between the gate structures followed byreactive-ion etching, which removes portions of gate dielectric layer 12and fin layer 16 from the structure depicted in FIG. 8 thereby creatingtrenches 50, in accordance with an exemplary embodiment of the presentinvention.

FIG. 10 illustrates a cross-sectional view depicting silicon-germaniumepitaxial growth 52 within the trenches 50 created in the structuredepicted in FIG. 9, in accordance with an exemplary embodiment of thepresent invention. In exemplary embodiments, the desired strain isretained after the silicon-germanium epitaxial growth step in partbecause of the structural reinforcement provided by stress nitride 40.

FIG. 11 illustrates a top-down view depicting the formation of contacts21 on top of the epitaxial growth layer created in the structuredepicted in FIG. 10, in accordance with an exemplary embodiment of thepresent invention.

The formation of contacts 21 involves a trenchsilicide/metallization/CMP process. The formation of contacts such ascontacts 21 as embodied by FIG. 11 is well understood by those skilledin the art and, as such, a detailed description of such processes is notpresented herein.

FIG. 12 illustrates a cross-sectional view taken along line 12-12 ofFIG. 11, in accordance with an exemplary embodiment of the presentinvention. FIG. 12 illustrates the confinement of epitaxial growth layer52 in the structure depicted in FIG. 11. As depicted, the processdescribed in embodiments of the present invention confine epitaxialgrowth layer between MOL ILD layer portions 24.

The descriptions of the various embodiments of the present inventionhave been presented for purposes of illustration, but are not intendedto be exhaustive or limited to the embodiments disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the describedembodiments. The terminology used herein was chosen to best explain theprinciples of the embodiment, the practical application or technicalimprovement over technologies found in the marketplace, or to enableother of ordinary skill in the art to understand the embodimentsdisclosed herein.

The methods and structures as described above are used in thefabrication of integrated circuit chips. The resulting integratedcircuit chips can be distributed by the fabricator in raw wafer form(that is, as a single wafer that has multiple unpackaged chips), as abare die, or in a packaged form. In the latter case the chip is mountedin a single chip package (such as a plastic carrier, with leads that areaffixed to a motherboard or other higher level carrier) or in amultichip package (such as a ceramic carrier that has either or bothsurface interconnections or buried interconnections). In any case thechip is then integrated with other chips, discrete circuit elements,and/or other signal processing devices as part of either (a) anintermediate product, such as a motherboard, or (b) an end product. Theend product can be any product that includes integrated circuit chips,ranging from toys and other low-end applications to advanced computerproducts having a display, a keyboard or other input device, and acentral processor.

What is claimed is:
 1. A multi-gate finFET structure comprising: anepitaxial semiconductor layer, wherein the epitaxial semiconductor layerfills, at least in part, an area between a first gate structure and asecond gate structure; and a stress-inducing material that fills a fincut trench that is adjacent to the first gate structure.
 2. Themulti-gate finFET structure of claim 1 further comprising: a MOL ILDlayer, wherein the MOL ILD layer abuts portions of the epitaxialsemiconductor layer.
 3. The multi-gate finFET structure of claim 2,wherein the MOL ILD layer is one or both of: silicon dioxide and a low-κdielectric material.
 4. The multi-gate finFET structure of claim 1,wherein the first and second gate structures are each one of asacrificial gate or a true gate.
 5. The multi-gate finFET structure ofclaim 1, wherein one or both of the first and second gate structuresinclude one or more of: silicon, doped polysilicon with metal silicide,tungsten, titanium, tantalum, aluminum, nickel, ruthenium, palladium,platinum, tungsten nitride, aluminum nitride, titanium nitride, tungstensilicide, nickel silicide, and titanium silicide.
 6. The multi-gatefinFET structure of claim 1, wherein the stress-inducing material is astress nitride.
 7. The multi-gate finFET structure of claim 1, whereinthe stress-inducing material is one or both of: a tensile siliconnitride layer and a compressive silicon nitride layer.
 8. The multi-gatefinFET structure of claim 1, wherein the epitaxial semiconductor layeris a silicon-germanium layer.
 9. The multi-gate finFET structure ofclaim 1 further comprising a fin, wherein: the fin terminates at, andabuts, the stress-inducing material; the fin includes a gate dielectriclayer on top of a channel; the gate dielectric layer lies between and isin contact with 1) the channel and the first gate structure, and 2) thechannel and the second gate structure; and the epitaxial semiconductorlayer penetrates the gate dielectric layer and makes contact with thechannel.
 10. The multi-gate finFET structure of claim 9, wherein thechannel includes one or more of: silicon, an alloy of silicon-germanium,a III-V compound semiconductor, and a II-VI compound semiconductor. 11.A method of forming a multi-gate finFET structure comprising: depositinga stress-inducing material into a fin cut trench that is adjacent to afirst gate structure such that a channel, which is controlled by thefirst gate structure, has a first amount of strain; growing an epitaxialsemiconductor layer between the first gate structure and a second gatestructure, wherein the first amount of strain is increased to a secondamount of strain as a result of the growth of the epitaxialsemiconductor layer.
 12. The method of claim 11, the method comprising:forming the first gate structure, wherein the first gate structureincludes an inner side and the outer side; forming a second gatestructure that is adjacent to the first gate structure such that theinner side of the first gate structure faces, at least in part, thesecond gate structure; forming the fin cut trench that is adjacent tothe outer side of the first gate structure; and forming the epitaxialsemiconductor layer such that the epitaxial semiconductor layer fills,at least in part, an area between the first gate structure and thesecond gate structure.
 13. The method of claim 11, wherein thestress-inducing material includes one or more of: a stress nitridelayer, a tensile silicon nitride layer and a compressive silicon nitridelayer.
 14. The method of claim 11, wherein each of the first and secondgate structures are one of: a sacrificial gate or a true gate.
 15. Themethod of claim 11, wherein the first and second gate structures includesilicon, doped polysilicon with metal silicide, tungsten, titanium,tantalum, aluminum, nickel, ruthenium, palladium, platinum, tungstennitride, aluminum nitride, titanium nitride, tungsten silicide, nickelsilicide, and titanium silicide.
 16. The method of claim 11, wherein theepitaxial semiconductor layer is a silicon-germanium layer.
 17. Themethod of claim 11, wherein the channel includes one or more of:silicon, an alloy of silicon-germanium, a III-V compound semiconductor,and a II-VI compound semiconductor.
 18. The method of claim 11 furthercomprising: depositing a MOL ILD layer on an intermediate of themulti-gate finFET structure; and controlling lateral source drainepitaxial growth of the epitaxial semiconductor layer.
 19. The method ofclaim 18, wherein the MOL ILD layer is one or both of: silicon dioxideand a low-κ dielectric material.
 20. The method of claim 11, wherein thestress-inducing material fills a majority of the fin cut trench.